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tvs/esd arrays RLSO10A055LV series speci?cations are subject to change without notice. please refer to http://www.ruilon.com for current information. electronic s circuit prote ct io n system
tvs/esd arrays - RLSO10A055LV series page:1 speci?cations are subject to change without notice. please refer to http://www.ruilon.com for current information. ? esd protection for high-speed data lines to ? iec 61000-4-2 (esd) 18kv (air), 12kv (contact) ? iec 61000-4-5 (lightning) 5a (8/20s) ? iec 61000-4-4 (eft) 40a (5/50ns) ? array of surge rated diodes with internal tvs diode ? small package saves board space ? protects four i/o lines and one vcc line ? low capacitance: 0.3pf typical (i/o to i/o) ? low clamping voltage ? low operating voltage: 5.0v ? solid-state silicon-avalanche technology features mechanical characteristics ? jedec msop 10l package ? molding compound fammability rating: ul 94v-0 ? marking : marking code and date code ? packaging : tape and reel per eia 481 ? lead finish: matte tin ? rohs/weee compliant applications ? high defnition multi-media interface (hdmi) ? digital visual interface (dvi) ? 10/100/1000 ethernet ? monitors and flat panel displays ? notebook computers ? set top box ? projection tv ? not intended for use in life support or life saving applications ? the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated life support note pinout and functional block diagram msop-10 (top view) 1 j o 1 j o 1 j o 1 j o 1 j o 1 j o circuit prote ct io n system tvs/esd arrays - RLSO10A055LV series page:2 speci?cations are subject to change without notice. please refer to http://www.ruilon.com for current information. absolute maximum rating rating symbol value units peak pulse power (tp=8/20 s waveform) p pp 125 watts esd voltage (hbm contact) vesd 8 a esd voltage (air contact) v esd 15 kv operating temperature tj -55~+150 c storage temperature tstg -55~+150 c electrical characterlstics per lin (@ 25c unless otherwise specifed) parameter symbol conditions minimum typical maximum units reverse stand-off voitage v rwm pin 3 to 8 - - 5 v reverse breakdown voltage vbr it = 1ma pin 3 to 8 6.0 - - v reverse leakage current i r vrwm = 5v, t=25c pin 3 to 8 - - 1 a clamping voltage (tp=8/20s) v c ipp = 1a, tp = 8/20s any i/o pin to ground - - 15 v clamping voltage (tp=8/20s) v c ipp = 5a, tp = 8/20s any i/o pin to ground - - 20 v junction capacitance v c vr = 0v, f = 1mhz between i/o pins - 0.3 0.7 pf junction capacitance v c vr = 0v, f = 1mhz any i/o pin to ground - 0.7 0.9 pf circuit prote ct io n system tvs/esd arrays - RLSO10A055LV series page:3 speci?cations are subject to change without notice. please refer to http://www.ruilon.com for current information. typical characteristics non-repetitive peak pulse power vs. pulse tim e power derating curve " n c j f o u 5 f n q f s b u v s f 5 " p $ p g 3 b u f e 1 p x f s p s * 1 1 clamping v olt age vs. p eak pulse current pulse waveform f o r w ard v olt age vs. f o r w ard current normalized capacitance vs. reverse voltage 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 100 110 0 5 1 0 1 5 2 0 2 5 3 0 t i m e (s ) pe r c en t of i p p e -t td = i p p / 2 w a v e fo r m par a m e t e r s : t r = 8 s t d = 20s 1 v m t f % v s b u j p o u q t 1 f b l 1 v m t f 1 p x f s 1 1 1 l 8 1 f b l 1 v m t f $ v s s f o u * 1 1 " $ m b n q j o h 7 p m u b h f 7 $ 7 8 b w f g p s n 1 b s b n f u f s t u s t u e t - j o f u p ( o e - j o f u p - j o f 1 f b l 1 v m t f $ v s s f o u " ' p s x b s e 7 p m u b h f 7 8 b w f g p s n 1 b s b n f u f s t u s t u e t 3 f w f s t f 7 p m u b h f 7 3 7 $ + 7 3 |